HIGH-PERFORMANCE OF HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES

High performance of high-voltage rectifiers could be realized utilizing 4H-SiC Schottky barrier diodes, A typical specific on-resistance (R(on)) of these devices was 1.4 x 10(3) Omega cm(3) at 24 degrees C (room temperature) with breakdown voltages as high as 800 V. These devices based on 4H-SiC had R(on)'s lower than 6H-SiC based high-power rectifiers with the same breakdown voltage, As for Schottky contact metals, Au, Ni, and Ti were employed in this study, The barrier heights of these metals for 4H-SiC were determined by the analysis of current-voltage characteristics, and the reduction of power loss could be achieved by controlling the barrier heights.