HIGH-PERFORMANCE OF HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES

被引：219
|
作者：
ITOH, A
KIMOTO, T
MATSUNAMI, H
机构：
[1] Department of Electrical Engineering, Kyoto University
来源：
IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 06期
关键词：
D O I：
10.1109/55.790735
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High performance of high-voltage rectifiers could be realized utilizing 4H-SiC Schottky barrier diodes, A typical specific on-resistance (R(on)) of these devices was 1.4 x 10(3) Omega cm(3) at 24 degrees C (room temperature) with breakdown voltages as high as 800 V. These devices based on 4H-SiC had R(on)'s lower than 6H-SiC based high-power rectifiers with the same breakdown voltage, As for Schottky contact metals, Au, Ni, and Ti were employed in this study, The barrier heights of these metals for 4H-SiC were determined by the analysis of current-voltage characteristics, and the reduction of power loss could be achieved by controlling the barrier heights.
引用
收藏
页码：280 / 282
页数：3
相关论文
共 50 条
  • [1] HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES
    RAGHUNATHAN, R
    ALOK, D
    BALIGA, BJ
    IEEE ELECTRON DEVICE LETTERS, 1995, 16 (06) : 226 - 227
  • [2] Analysis of high reverse currents of 4H-SiC Schottky-barrier diodes
    Okino, Hiroyuki
    Kameshiro, Norifumi
    Konishi, Kumiko
    Shima, Akio
    Yamada, Ren-ichi
    JOURNAL OF APPLIED PHYSICS, 2017, 122 (23)
  • [3] THE PERFORMANCE OF HIGH-VOLTAGE FIELD RELIEVED SCHOTTKY-BARRIER DIODES
    FISHER, CA
    SHANNON, JM
    PAXMAN, DH
    SLATTER, JAG
    IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1985, 132 (06): : 257 - 260
  • [4] Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes
    Ivanov, P. A.
    Grekhov, I. V.
    Potapov, A. S.
    Il'inskaya, N. D.
    Kon'kov, O. I.
    Samsonova, T. P.
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 877 - 880
  • [5] Excess leakage currents in high-voltage 4H-SiC Schottky diodes
    P. A. Ivanov
    I. V. Grekhov
    A. S. Potapov
    T. P. Samsonova
    N. D. Il’inskaya
    O. I. Kon’kov
    O. Yu. Serebrennikova
    Semiconductors, 2010, 44 : 653 - 656
  • [6] Excess leakage currents in high-voltage 4H-SiC Schottky diodes
    Ivanov, P. A.
    Grekhov, I. V.
    Potapov, A. S.
    Samsonova, T. P.
    Il'inskaya, N. D.
    Kon'kov, O. I.
    Serebrennikova, O. Yu.
    SEMICONDUCTORS, 2010, 44 (05) : 653 - 656
  • [7] High-voltage 4H-SiC Schottky barrier diodes fabricated on (033¯8) with closed micropipes
    Kimoto, T., 1600, Japan Society of Applied Physics (42):
  • [8] THE GUARD-RING TERMINATION FOR THE HIGH-VOLTAGE SIC SCHOTTKY-BARRIER DIODES
    UENO, K
    URUSHIDANI, T
    HASHIMOTO, K
    SEKI, Y
    IEEE ELECTRON DEVICE LETTERS, 1995, 16 (07) : 331 - 332
  • [9] Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature
    Lebedev, A. A.
    Kozlovski, V. V.
    Levinshtein, M. E.
    Malevsky, D. A.
    Oganesyan, G. A.
    Strel'chuk, A. M.
    Davydovskaya, K. S.
    SEMICONDUCTORS, 2022, 56 (03) : 189 - 194
  • [10] Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature
    A. A. Lebedev
    V. V. Kozlovski
    M. E. Levinshtein
    D. A. Malevsky
    G. A. Oganesyan
    A. M. Strel’chuk
    K. S. Davydovskaya
    Semiconductors, 2022, 56 : 189 - 194
12345