EXCITON CAPTURE CROSS-SECTIONS OF INDIUM AND BORON IMPURITIES IN SILICON

被引：19

作者：

FEENSTRA, RM

MCGILL, TC

机构：

来源：

SOLID STATE COMMUNICATIONS | 1980年 / 36卷 / 12期

关键词：

D O I：

10.1016/0038-1098(80)90033-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1039 / 1045

页数：7

相关论文

共 25 条

[1] RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM
ASCARELLI, G
RODRIGUEZ, S
[J]. PHYSICAL REVIEW, 1961, 124 (05): : 1321 - &
[2] REMARKS ON RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM
BELEZNAY, F
PATAKI, G
[J]. PHYSICA STATUS SOLIDI, 1966, 13 (02): : 499 - &
[3] LOW-TEMPERATURE RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM AND SILICON
BROWN, RA
RODRIGUEZ, S
[J]. PHYSICAL REVIEW, 1967, 153 (03): : 890 - +
[4] LOW-LYING EXCITED-STATES OF THE BOUND EXCITON IN A SPHERICAL MODEL
CHANG, YC
MCGILL, TC
[J]. SOLID STATE COMMUNICATIONS, 1979, 32 (04) : 319 - 322
[5] ABSORPTION DUE TO BOUND EXCITONS IN SILICON
DEAN, PJ
FLOOD, WF
KAMINSKY, G
[J]. PHYSICAL REVIEW, 1967, 163 (03): : 721 - &
[6] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM
DEAN, PJ
HAYNES, JR
FLOOD, WF
[J]. PHYSICAL REVIEW, 1967, 161 (03): : 711 - &
[7] BOUND-EXCITON ABSORPTION IN SI=AL, SI=GA, AND SI=IN
ELLIOTT, KR
OSBOURN, GC
SMITH, DL
MCGILL, TC
[J]. PHYSICAL REVIEW B, 1978, 17 (04): : 1808 - 1815
[8] ELLIOTT KR, 1978, SOLID STATE COMMUN, V24, P461
[9] ANALYSIS OF LO AND TO PHONON ASSISTED FREE EXCITON LUMINESCENCE IN SILICON
HAMMOND, RB
SILVER, RN
[J]. SOLID STATE COMMUNICATIONS, 1978, 28 (12) : 993 - 996
[10] TEMPERATURE-DEPENDENCE OF THE EXCITON LIFETIME IN HIGH-PURITY SILICON
HAMMOND, RB
SILVER, RN
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 68 - 71