CURRENT TRANSPORT IN MODULATION-DOPED GA0.47IN0.53AS AL0.48IN0.52AS HETEROJUNCTIONS AT MODERATE ELECTRIC-FIELDS

被引:11
作者
DRUMMOND, TJ
MORKOC, H
CHENG, KY
CHO, AY
机构
[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
[2] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
关键词
D O I
10.1063/1.331149
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3654 / 3657
页数:4
相关论文
共 50 条
  • [41] Green's function approach for transport calculation in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure
    Vasileska, D
    Prasad, C
    Wieder, HH
    Ferry, DK
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (06) : 3359 - 3363
  • [42] ROOM-TEMPERATURE OPTICAL-ABSORPTION AND CONFINEMENT EFFECT IN GA0.47IN0.53AS/AL0.48IN0.52AS MQW
    ADELABU, JSA
    RIDLEY, BK
    DAVIES, GJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (08) : 677 - 681
  • [43] Electron transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well with a δ-Si doped barrier in high electric fields
    I. S. Vasil’evskii
    G. B. Galiev
    Yu. A. Matveev
    E. A. Klimov
    J. Požela
    K. Požela
    A. Sužiedėlis
    Č. Paškevič
    V. Jucienė
    Semiconductors, 2010, 44 : 898 - 903
  • [44] GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6-MU-M
    ALAVI, K
    PEARSALL, TP
    FORREST, SR
    CHO, AY
    ELECTRONICS LETTERS, 1983, 19 (06) : 227 - 229
  • [45] A STUDY OF ALLOYED AUGENI/AG/AU BASED OHMIC CONTACTS ON THE AL0.48IN0.52AS/GA0.47IN0.53AS SYSTEM
    CAPANI, PM
    MUKHERJEE, SD
    ZWICKNAGL, P
    BERRY, JD
    GRIEM, HT
    WICKS, GW
    RATHBUN, L
    EASTMAN, LF
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (03) : 185 - 191
  • [46] MICROWAVE CHARACTERIZATION OF 1-MU-M-GATE AL0.48IN0.52AS/GA0.47IN0.53AS/INP MODFETS
    PALMATEER, LF
    TASKER, PJ
    ITOH, T
    BROWN, AS
    WICKS, GW
    EASTMAN, LF
    ELECTRONICS LETTERS, 1987, 23 (01) : 53 - 55
  • [47] SILICON DOPING AND IMPURITY PROFILES IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY
    CHENG, KY
    CHO, AY
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4411 - 4415
  • [48] Electron Transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As Quantum Well with a δ-Si Doped Barrier in High Electric Fields
    Vasil'evskii, I. S.
    Galiev, G. B.
    Matveev, Yu. A.
    Klimov, E. A.
    Pozela, J.
    Pozela, K.
    Suziedelis, A.
    Paskevic, C.
    Juciene, V.
    SEMICONDUCTORS, 2010, 44 (07) : 898 - 903
  • [49] INTERFACE ROUGHNESS SCATTERING IN NORMAL AND INVERTED IN0.53GA0.47AS-IN0.52AL0.48AS MODULATION-DOPED HETEROSTRUCTURES
    HONG, WP
    SINGH, J
    BHATTACHARYA, PK
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (08) : 480 - 482
  • [50] I/V ANOMALITY AND DEVICE PERFORMANCE OF SUBMICROMETER-GATE GA0.47IN0.53AS/AL0.48IN0.52AS HEMT
    KUANG, JB
    TASKER, PJ
    CHEN, YK
    WANG, GW
    EASTMAN, LF
    AINA, OA
    HIER, H
    FATHIMULLA, A
    ELECTRONICS LETTERS, 1988, 24 (25) : 1571 - 1572