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CURRENT TRANSPORT IN MODULATION-DOPED GA0.47IN0.53AS AL0.48IN0.52AS HETEROJUNCTIONS AT MODERATE ELECTRIC-FIELDS
被引:11
作者
:
DRUMMOND, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
DRUMMOND, TJ
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
MORKOC, H
CHENG, KY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
CHENG, KY
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
CHO, AY
机构
:
[1]
UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
[2]
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
来源
:
JOURNAL OF APPLIED PHYSICS
|
1982年
/ 53卷
/ 05期
关键词
:
D O I
:
10.1063/1.331149
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:3654 / 3657
页数:4
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机构:
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
PALMATEER, LF
TASKER, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
TASKER, PJ
ITOH, T
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
ITOH, T
BROWN, AS
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
BROWN, AS
WICKS, GW
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
WICKS, GW
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
EASTMAN, LF
ELECTRONICS LETTERS,
1987,
23
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: 53
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[47]
SILICON DOPING AND IMPURITY PROFILES IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY
CHENG, KY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHENG, KY
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
JOURNAL OF APPLIED PHYSICS,
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Electron Transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As Quantum Well with a δ-Si Doped Barrier in High Electric Fields
Vasil'evskii, I. S.
论文数:
0
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0
h-index:
0
机构:
Russian Acad Sci, Inst Microwave Semicond Elect, Moscow 117105, Russia
Russian Acad Sci, Inst Microwave Semicond Elect, Moscow 117105, Russia
Vasil'evskii, I. S.
Galiev, G. B.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, Inst Microwave Semicond Elect, Moscow 117105, Russia
Russian Acad Sci, Inst Microwave Semicond Elect, Moscow 117105, Russia
Galiev, G. B.
Matveev, Yu. A.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, Inst Microwave Semicond Elect, Moscow 117105, Russia
Russian Acad Sci, Inst Microwave Semicond Elect, Moscow 117105, Russia
Matveev, Yu. A.
Klimov, E. A.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, Inst Microwave Semicond Elect, Moscow 117105, Russia
Russian Acad Sci, Inst Microwave Semicond Elect, Moscow 117105, Russia
Klimov, E. A.
Pozela, J.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, Inst Microwave Semicond Elect, Moscow 117105, Russia
Inst Semicond Phys, LT-01108 Vilnius, Lithuania
Russian Acad Sci, Inst Microwave Semicond Elect, Moscow 117105, Russia
Pozela, J.
Pozela, K.
论文数:
0
引用数:
0
h-index:
0
机构:
Inst Semicond Phys, LT-01108 Vilnius, Lithuania
Russian Acad Sci, Inst Microwave Semicond Elect, Moscow 117105, Russia
Pozela, K.
Suziedelis, A.
论文数:
0
引用数:
0
h-index:
0
机构:
Inst Semicond Phys, LT-01108 Vilnius, Lithuania
Russian Acad Sci, Inst Microwave Semicond Elect, Moscow 117105, Russia
Suziedelis, A.
Paskevic, C.
论文数:
0
引用数:
0
h-index:
0
机构:
Inst Semicond Phys, LT-01108 Vilnius, Lithuania
Russian Acad Sci, Inst Microwave Semicond Elect, Moscow 117105, Russia
Paskevic, C.
Juciene, V.
论文数:
0
引用数:
0
h-index:
0
机构:
Inst Semicond Phys, LT-01108 Vilnius, Lithuania
Russian Acad Sci, Inst Microwave Semicond Elect, Moscow 117105, Russia
Juciene, V.
SEMICONDUCTORS,
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INTERFACE ROUGHNESS SCATTERING IN NORMAL AND INVERTED IN0.53GA0.47AS-IN0.52AL0.48AS MODULATION-DOPED HETEROSTRUCTURES
HONG, WP
论文数:
0
引用数:
0
h-index:
0
HONG, WP
SINGH, J
论文数:
0
引用数:
0
h-index:
0
SINGH, J
BHATTACHARYA, PK
论文数:
0
引用数:
0
h-index:
0
BHATTACHARYA, PK
IEEE ELECTRON DEVICE LETTERS,
1986,
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I/V ANOMALITY AND DEVICE PERFORMANCE OF SUBMICROMETER-GATE GA0.47IN0.53AS/AL0.48IN0.52AS HEMT
KUANG, JB
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL NANOFABR FACIL,ITHACA,NY 14853
KUANG, JB
TASKER, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL NANOFABR FACIL,ITHACA,NY 14853
TASKER, PJ
CHEN, YK
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL NANOFABR FACIL,ITHACA,NY 14853
CHEN, YK
WANG, GW
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL NANOFABR FACIL,ITHACA,NY 14853
WANG, GW
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL NANOFABR FACIL,ITHACA,NY 14853
EASTMAN, LF
AINA, OA
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL NANOFABR FACIL,ITHACA,NY 14853
AINA, OA
HIER, H
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL NANOFABR FACIL,ITHACA,NY 14853
HIER, H
FATHIMULLA, A
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL NANOFABR FACIL,ITHACA,NY 14853
FATHIMULLA, A
ELECTRONICS LETTERS,
1988,
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