CURRENT TRANSPORT IN MODULATION-DOPED GA0.47IN0.53AS AL0.48IN0.52AS HETEROJUNCTIONS AT MODERATE ELECTRIC-FIELDS

被引:11
作者
DRUMMOND, TJ
MORKOC, H
CHENG, KY
CHO, AY
机构
[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
[2] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
关键词
D O I
10.1063/1.331149
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3654 / 3657
页数:4
相关论文
共 14 条
[1]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM GA0.47IN0.53AS WITH A ROTATING SAMPLE HOLDER [J].
CHENG, KY ;
CHO, AY ;
WAGNER, WR .
APPLIED PHYSICS LETTERS, 1981, 39 (08) :607-609
[2]   TIN DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52AS GROWN BY MOLECULAR-BEAM EPITAXY [J].
CHENG, KY ;
CHO, AY ;
WAGNER, WR .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6328-6330
[3]   ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY [J].
CHENG, KY ;
CHO, AY ;
DRUMMOND, TJ ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1982, 40 (02) :147-149
[4]   GROWTH OF EXTREMELY UNIFORM LAYERS BY ROTATING SUBSTRATE HOLDER WITH MOLECULAR-BEAM EPITAXY FOR APPLICATIONS TO ELECTRO-OPTIC AND MICROWAVE DEVICES [J].
CHO, AY ;
CHENG, KY .
APPLIED PHYSICS LETTERS, 1981, 38 (05) :360-362
[5]   TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION [J].
DELESCLUSE, P ;
LAVIRON, M ;
CHAPLART, J ;
DELAGEBEAUDEUF, D ;
LINH, NT .
ELECTRONICS LETTERS, 1981, 17 (10) :342-344
[6]   PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J].
DRUMMOND, TJ ;
KOPP, W ;
FISCHER, R ;
MORKOC, H ;
THORNE, RE ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1238-1240
[7]   DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J].
DRUMMOND, TJ ;
MORKOC, H ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1380-1386
[8]   THE EFFECT OF GROWTH TEMPERATURE ON THE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J].
HIYAMIZU, S ;
FUJII, T ;
MIMURA, T ;
NANBU, K ;
SAITO, J ;
HASHIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) :L455-L458
[9]  
KEEVER M, UNPUB
[10]   MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J].
LIECHTI, CA .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :279-330