CF3, CF2 AND CF RADICAL MEASUREMENTS IN RF CHF3 ETCHING PLASMA USING INFRARED DIODE-LASER ABSORPTION-SPECTROSCOPY

被引：54

作者：

MARUYAMA, K

OHKOUCHI, K

OHTSU, Y

GOTO, T

机构：

[1] NAGOYA UNIV,DEPT INFORMAT ELECTR ENGN,CHIKUSA KU,NAGOYA,AICHI 46401,JAPAN

[2] SAGA UNIV,DEPT ELECT ENGN,SAGA 840,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 7B期

关键词：

INFRARED DIODE LASER ABSORPTION SPECTROSCOPY (IRLAS); CF3; RADICAL; CF2; CF RADICAL; RF CHF3 PLASMA;

D O I：

10.1143/JJAP.33.4298

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the characteristics of CF3, CF2 and CF radical densities in RF CHF3 etching plasma under the same condition using infrared diode laser absorption spectroscopy, for the first time. The CFx radical density measurements have been performed as a function of input RF power, CHF3 gas pressure and distance from the RF electrode. On the basis of these systematic measurements, the generation and loss processes of CFx radicals in RF CHF3 plasma were discussed.

引用

页码：4298 / 4302

页数：5

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