ELECTROLUMINESCENCE CHARACTERISTICS OF EPITAXIAL GAAS P-N-JUNCTIONS WITH DELIBERATELY COMPENSATED P-TYPE REGIONS AND N-TYPE REGIONS

被引：0
|
作者：
ALFEROV, ZI [1 ]
ANDREEV, VM [1 ]
GARBUZOV, DZ [1 ]
ERMAKOVA, AN [1 ]
MOROZOV, EP [1 ]
TRUKAN, MK [1 ]
机构：
[1] AF IOFFE PHYS TECHN INST USSR,LENINGRAD,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 10期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：1726 / 1730
页数：5
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