ELECTROLUMINESCENCE CHARACTERISTICS OF EPITAXIAL GAAS P-N-JUNCTIONS WITH DELIBERATELY COMPENSATED P-TYPE REGIONS AND N-TYPE REGIONS

被引：0
|
作者：
ALFEROV, ZI [1 ]
ANDREEV, VM [1 ]
GARBUZOV, DZ [1 ]
ERMAKOVA, AN [1 ]
MOROZOV, EP [1 ]
TRUKAN, MK [1 ]
机构：
[1] AF IOFFE PHYS TECHN INST USSR,LENINGRAD,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 10期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1726 / 1730
页数：5
相关论文
共 50 条
  • [1] ELECTROLUMINESCENCE CHARACTERISTICS OF EPITAXIAL GaAs p-n JUNCTIONS WITH DELIBERATELY COMPENSATED p- AND n-TYPE REGIONS.
    Alferov, Zh.I.
    Andreev, V.M.
    Garbuzov, D.Z.
    Ermakova, A.N.
    Morozov, E.P.
    Trukan, M.K.
    1973, 6 (10): : 1726 - 1730
  • [2] Radiative recombination in n-type and p-type GaAs compensated with Li
    Gislason, H.P.
    Yang, B.H.
    Petursson, J.
    Linnarsson, M.
    Journal of Applied Physics, 1993, 74 (12):
  • [3] RADIATIVE RECOMBINATION IN N-TYPE AND P-TYPE GAAS COMPENSATED WITH LI
    GISLASON, HP
    YANG, BH
    PETURSSON, J
    LINNARSSON, M
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (12) : 7275 - 7287
  • [4] PHOTOLUMINESCENCE OF EPITAXIAL N-TYPE GAAS PREPARED FROM P-TYPE GAAS
    GORELENOK, AT
    NASLEDOV, DN
    NEGRESKU.V
    TSARENKO.BV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (05): : 551 - +
  • [5] p-Type ZnO Films for Preparation of p-n-Junctions
    Aghamalyan, N. R.
    Hovsepyan, R. K.
    Petrosyan, S. I.
    JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES, 2008, 43 (04) : 177 - 182
  • [6] p-type ZnO films for preparation of p-n-junctions
    N. R. Aghamalyan
    R. K. Hovsepyan
    S. I. Petrosyan
    Journal of Contemporary Physics (Armenian Academy of Sciences), 2008, 43 : 177 - 182
  • [7] RELAXATION OF THE CAPACITANCE OF A N-PI-P JUNCTION WITH AN ARBITRARY DEGREE OF DOPING OF THE N-TYPE AND P-TYPE REGIONS
    URMANOV, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (09): : 917 - 921
  • [8] DIFFUSION OF IMPLANTED BERYLLIUM IN N-TYPE AND P-TYPE GAAS
    DEAL, MD
    ROBINSON, HG
    APPLIED PHYSICS LETTERS, 1989, 55 (19) : 1990 - 1992
  • [9] SINTERED OHMIC CONTACTS TO N-TYPE AND P-TYPE GAAS
    SINHA, AK
    SMITH, TE
    LEVINSTEIN, HJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) : 218 - 224
  • [10] CARBON DIFFUSION IN UNDOPED, N-TYPE, AND P-TYPE GAAS
    CUNNINGHAM, BT
    GUIDO, LJ
    BAKER, JE
    MAJOR, JS
    HOLONYAK, N
    STILLMAN, GE
    APPLIED PHYSICS LETTERS, 1989, 55 (07) : 687 - 689
12345