ELECTROLUMINESCENCE CHARACTERISTICS OF EPITAXIAL GAAS P-N-JUNCTIONS WITH DELIBERATELY COMPENSATED P-TYPE REGIONS AND N-TYPE REGIONS

被引：0

作者：

ALFEROV, ZI ^{[1
]}

ANDREEV, VM ^{[1
]}

GARBUZOV, DZ ^{[1
]}

ERMAKOVA, AN ^{[1
]}

MOROZOV, EP ^{[1
]}

TRUKAN, MK ^{[1
]}

机构：

[1] AF IOFFE PHYS TECHN INST USSR,LENINGRAD,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1726 / 1730

页数：5

共 21 条

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[2]

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[3]

Alferov Zh. I., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P1282

[4]

Alferov Zh. I., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P554

[5]

ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V3, P600

[6]

ALFEROV ZI, 1969, FIZ TVERD TELA+, V10, P2260

[7]

ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V4, P1089

[8]

ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V3, P471

[9]

ALFEROV ZI, 1972, FIZ TEKH POLUPROV, V6, P2027

[10]

ALFEROV ZI, 1972, FIZ TEKH POLUPROV, V6, P2015