CORRELATION OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICON

被引：42

作者：

CULLIS, AG

WEBBER, HC

CHEW, NG

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 07期

关键词：

D O I：

10.1063/1.91575

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：547 / 550

页数：4

共 21 条

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[3]

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[5]

Bicknell R. W., 1970, European conference on ion implantation, P57

[6] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J].

CELLER, GK ;

POATE, JM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :464-466

[7] TEM STUDY OF SILICON LASER ANNEALED AFTER THE IMPLANTATION OF LOW SOLUBILITY DOPANTS [J].

CULLIS, AG ;

WEBBER, HC ;

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CHEW, NG .

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[8] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J].

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BAILEY, P .

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[9] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J].

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[10]

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