A First Principles Study of Chalcopyrite Mn-doped AlGaP2 Compounds

被引:0
|
作者
Kang, Byung-Sub [1 ]
Song, Kie-Moon [1 ]
机构
[1] Konkuk Univ, Nanotechnol Res Ctr, Nano Sci & Mech Engn, Chungju 380701, South Korea
关键词
Chalcopyrite AlGaP2 semiconductor; Band-structure; Ferromagnetism; First-principles;
D O I
暂无
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We studied the electronic and magnetic properties for the Mn-doped chalcopyrite AlGaP2 semiconductor by using the first-principles calculations. The Mn-doped AlGaP2 yields strong half-metallic ground states. The ferromagnetic state is the most energetically favorable one. The states of host Al, Ga, or P atoms at the Fermi level are mainly a P-3p character, which mediates a strong interaction between the Mn-3d and P-3p states. The ferromagnetic ordering of dopant Mn with high magnetic moment is originated from the P(3p)-Mn(3d)-P(3p) hybridization, which is attributed by the partially filled P-3p bands. The high magnetic moment of Mn by P vacancy is produced by 4.2 mu(B)/Mn.
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页数:5
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