ELECTRICAL PROPERTIES OF N-TYPE SI LAYERS DOPED WITH PROTON BOMBARDMENT INDUCED SHALLOW DONORS

被引：78

作者：

OHMURA, Y

ZOHTA, Y

KANAZAWA, M

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(72)91173-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：263 / &

共 10 条

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[2]

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[3]

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[6] CHANNELING STUDY OF BORON-IMPLANTED SILICON [J].

NORTH, JC ;

GIBSON, WM .

[7]

OHMURA Y, TO BE PUBLISHED

REISS, H .

[9] SHALLOW DONOR STATE PRODUCED BY PROTON BOMBARDMENT OF SILICON [J].

ZOHTA, Y ;

OHMURA, Y ;

KANAZAWA, M .

ZOHTA, Y .