DEFECT DIFFUSION IN ION-IMPLANTED GLASSES

被引：24
作者：
ARNOLD, GW
BATTAGLIN, G
BOSCOLOBOSCOLETTO, A
CACCAVALE, F
DEMARCHI, G
MAZZOLDI, P
MIOTELLO, A
机构：
[1] UNIV PADUA,DIPARTIMENTO FIS,CONSORZIO INFM,I-35100 PADUA,ITALY
[2] UNIV VENICE,DIPARTIMENTO CHIM FIS,CONSORZIO INFM,VENICE,ITALY
[3] CTR RIC MONTEDIPE,VENICE,ITALY
[4] UNIV TRENTO,DIPARTIMENTO FIS,CONSORZIO INFM,I-38050 TRENT,ITALY
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 65卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(92)95072-Y
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Ion implantation in glasses produces structure modifications at depths greater than those of the implanted ion range. Such a result is evidenced by means of leaching experiments, alkali element depletion, distribution of gaseous implanted species, etching rate as function of depth. A systematic study with the aim to evidence a threshold in the nuclear deposited energy for defect diffusion is presented. Fourier transform infrared spectroscopy measurements confirm the glass modifications at extended depths.
引用
收藏
页码：387 / 391
页数：5
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