INTERFACE STRUCTURE OF INAS GROWN ON GAAS(001) SURFACES BY MOLECULAR-BEAM EPITAXY

被引：22

作者：

FAWCETT, PN ^{[1
]}

JOYCE, BA ^{[1
]}

ZHANG, X ^{[1
]}

PASHLEY, DW ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT MAT,LONDON SW7 2BZ,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 116卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(92)90117-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A series of InAs layers has been grown on GaAs(001) surfaces by MBE using a wide range of growth conditions. In all samples, cross-sectional TEM studies of the interface showed the presence of (In,Ga)As protrusions. The formation of these protrusions is thought to be due to the presence of In droplets which form and subsequently react with the GaAs surface during the early stage of deposition.

引用

页码：81 / 86

页数：6

共 10 条

[1] SURFACE PROCESSES CONTROLLING GROWTH OF GAXIN1-XAS AND GAXIN1-XP ALLOY-FILMS BY MBE [J].

FOXON, CT ;

JOYCE, BA .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (01) :75-83

[2] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

GOLDSTEIN, L ;

GLAS, F ;

MARZIN, JY ;

CHARASSE, MN ;

LEROUX, G .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1099-1101

[3]

GUPTA SC, IN PRESS

[4] 1ST STAGES OF THE MBE GROWTH OF INAS ON (001)GAAS [J].

HOUZAY, F ;

GUILLE, C ;

MOISON, JM ;

HENOC, P ;

BARTHE, F .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :67-72

[5] DYNAMIC RHEED OBSERVATIONS OF THE MBE GROWTH OF GAAS - SUBSTRATE-TEMPERATURE AND BEAM AZIMUTH EFFECTS [J].

NEAVE, JH ;

JOYCE, BA ;

DOBSON, PJ .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03) :179-184

[6] INSITU OBSERVATION OF ROUGHENING PROCESS OF MBE GAAS SURFACE BY SCANNING REFLECTION ELECTRON-MICROSCOPY [J].

OSAKA, J ;

INOUE, N ;

MADA, Y ;

YAMADA, K ;

WADA, K .

JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) :120-123

[7] NUCLEATION AND STRAIN RELAXATION AT THE INAS/GAAS(100) HETEROJUNCTION [J].

SCHAFFER, WJ ;

LIND, MD ;

KOWALCZYK, SP ;

GRANT, RW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :688-695

[8] TOPOGRAPHIC STUDY ON AN INAS LATTICE-MISMATCHED HETEROEPITAXIAL LAYER GROWN ON GAAS BY MEANS OF X-RAY-SCATTERING RADIOGRAPHY [J].

SUZUKI, Y ;

CHIKAURA, Y ;

AKAZAKI, T .

APPLIED PHYSICS LETTERS, 1990, 56 (19) :1856-1858

[9] ON THE RHEED SPECULAR BEAM AND ITS INTENSITY OSCILLATION DURING MBE GROWTH OF GAAS [J].

ZHANG, J ;

NEAVE, JH ;

JOYCE, BA ;

DOBSON, PJ ;

FAWCETT, PN .

SURFACE SCIENCE, 1990, 231 (03) :379-388

[10] MODULATED MOLECULAR-BEAM STUDY OF GROUP-III DESORPTION DURING GROWTH BY MBE [J].

ZHANG, J ;

GIBSON, EM ;

FOXON, CT ;

JOYCE, BA .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :93-97

← 1 →