INTERRELATIONSHIP BETWEEN SATURATED DRIFT VELOCITY AND IMPACT IONIZATION OF ELECTRONS IN SILICON

被引：6

作者：

LANYON, HPD ^{[1
]}

机构：

[1] WORCESTER POLYTECH INST,ELECT ENGN DEPT,WORCESTER,MA 01609

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 10期

关键词：

D O I：

10.1063/1.1654493

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：522 / 524

页数：3

共 50 条

[41] DRIFT VELOCITY OF ELECTRONS IN BF3
BRACCI, A
ZIMMER, EL
NUOVO CIMENTO, 1953, 10 (01): : 103 - 104
[42] DRIFT VELOCITY OF ELECTRONS IN NITROGEN ARGON MIXTURES
HADDAD, GN
AUSTRALIAN JOURNAL OF PHYSICS, 1983, 36 (3A): : 297 - 303
[43] EFFECT OF POLARIZED VELOCITY DISTRIBUTION OF ELECTRONS ON DOUBLE IONIZATION OF HE BY PROTON IMPACT
SINGH, V
INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1980, 18 (03) : 176 - 179
[44] DRIFT VELOCITY OF ELECTRONS IN ARGON AND ARGON MIXTURES
KIRSHNER, JM
TOFFOLO, DS
JOURNAL OF APPLIED PHYSICS, 1952, 23 (05) : 594 - 598
[45] SATURATION OF DRIFT VELOCITY OF ELECTRONS IN SILICON-CARBIDE SUBJECTED TO STRONG ELECTRIC-FIELDS
LEVINSHTEIN, ME
RADOVANOVA, EI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 232 - 234
[46] MEASUREMENT OF DRIFT VELOCITY OF ELECTRONS IN SILICON BY EXCITING A DIODE STRUCTURE WITH SHORT SUPERRADIANT LASER PULSES
TOVE, PA
ANDERSSON, G
ERICSSON, G
LIDHOLT, R
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (05) : 407 - +
[47] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON
LEE, CA
KLEIMACK, JJ
BATDORF, RL
WIEGMANN, W
LOGAN, RA
PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +
[48] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON
CHYNOWETH, AG
PHYSICAL REVIEW, 1958, 109 (05): : 1537 - 1540
[49] ENERGY OF IONIZATION BY ELECTRONS IN SILICON CRYSTALS
PATSKEVICH, VM
VAVILOV, VS
SMIRNOV, LS
SOVIET PHYSICS JETP-USSR, 1958, 6 (03): : 619 - 620
[50] IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON
MILLER, SL
PHYSICAL REVIEW, 1957, 105 (04): : 1246 - 1249

← 1 2 3 4 5 →