INTERRELATIONSHIP BETWEEN SATURATED DRIFT VELOCITY AND IMPACT IONIZATION OF ELECTRONS IN SILICON

被引：6

|

作者：

LANYON, HPD ^{[1
]}

机构：

[1] WORCESTER POLYTECH INST,ELECT ENGN DEPT,WORCESTER,MA 01609

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 10期

关键词：

D O I：

10.1063/1.1654493

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：522 / 524

页数：3

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