INTERRELATIONSHIP BETWEEN SATURATED DRIFT VELOCITY AND IMPACT IONIZATION OF ELECTRONS IN SILICON

被引：6

作者：

LANYON, HPD ^{[1
]}

机构：

[1] WORCESTER POLYTECH INST,ELECT ENGN DEPT,WORCESTER,MA 01609

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 10期

关键词：

D O I：

10.1063/1.1654493

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：522 / 524

页数：3

共 50 条

[21] HIGH-FIELD DRIFT VELOCITY OF ELECTRONS IN SILICON INVERSION-LAYERS
MODELLI, A
MANZINI, S
SOLID-STATE ELECTRONICS, 1988, 31 (01) : 99 - 104
[22] THE DRIFT MOBILITY OF ELECTRONS IN SILICON
HAYNES, JR
WESTPHAL, WC
PHYSICAL REVIEW, 1952, 85 (04): : 680 - 680
[23] ON SATURATED DRIFT VELOCITY OF ELECTRONS IN SI FROM 77 DEGREES K TO 500 DEGREES K
COSTATO, M
REGGIANI, L
LETTERE AL NUOVO CIMENTO, 1970, 3 (23): : 728 - +
[24] DIRECTION DEPENDENCE OF THRESHOLD ENERGY FOR IMPACT IONIZATION BY ELECTRONS IN SILICON
SHEKHAR, C
KUMAR, S
KHOKLE, WS
SHARMA, SK
INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1978, 16 (10) : 929 - 931
[25] DRIFT VELOCITY OF ELECTRONS IN GAS MIXTURES
RIEKE, FF
ERRETT, DD
PHYSICAL REVIEW, 1952, 85 (04): : 706 - 706
[26] DRIFT VELOCITY OF ELECTRONS IN HYDROGEN AND NITROGEN
LOWKE, JJ
AUSTRALIAN JOURNAL OF PHYSICS, 1963, 16 (01): : 115 - &
[27] DRIFT VELOCITY OF ELECTRONS IN DENSE HELIUM
JAHNKE, J
SILVER, M
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 475 - 475
[28] SATURATED ELECTRON-DRIFT VELOCITY IN 6H SILICON-CARBIDE
MUENCH, WV
PETTENPAUL, E
JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4823 - 4825
[29] OPTICAL DISPERSION ELECTRONS, MOLECULAR STRUCTURE, THERMODYNAMIC PROPERTIES AND ELECTRON IMPACT IONIZATION OF SATURATED HYDROCARBONS .2. THE OPTICAL DISPERSION ELECTRONS, THERMODYNAMIC PROPERTIES AND ELECTRON IMPACT IONIZATION OF SATURATED HYDROCARBONS
NUTT, CW
TRANSACTIONS OF THE FARADAY SOCIETY, 1957, 53 (06): : 733 - 737
[30] HOLE DRIFT VELOCITY IN SILICON
OTTAVIANI, G
REGGIANI, L
CANALI, C
NAVA, F
ALBERIGIQUARANTA, A
PHYSICAL REVIEW B, 1975, 12 (08) : 3318 - 3329

← 1 2 3 4 5 →