LOW-TEMPERATURE PHOTOCONDUCTIVITY IN ANODIC TANTALUM OXIDE THIN-FILMS - REPLY

被引：0

作者：

BOKHARI, WH

机构：

[1] Department of Physics, Gomal University, D. I. Khan

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1990年 / 68卷 / 06期

关键词：

D O I：

10.1080/00207219008921236

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lehmberg’s observations on one of our earlier papers have been considered. It is argued that the experimental data and the interpretations brought forward by us can be considered reliable. However, it is agreed that the mention of Compton effect in our paper was somewhat out of place, although it did not change the entire picture of the process. © 1990 Taylor and Francis Ltd.

引用

页码：961 / 962

页数：2

共 6 条

[1] LOW-TEMPERATURE PHOTOCONDUCTIVITY IN ANODIC TANTALUM OXIDE THIN-FILMS [J].