ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF SHORT-WAVELENGTH GAINP/AIGAINP LASER GROWN ON (511)A GAAS SUBSTRATE BY METALORGANIC VAPOR-PHASE EPITAXY

被引：8
作者：
MINAGAWA, S
TANAKA, T
KONDOW, M
机构：
来源：
ELECTRONICS LETTERS | 1989年 / 25卷 / 14期
关键词：
D O I：
10.1049/el:19890620
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：925 / 926
页数：2
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[4]   ZINC-DOPING OF (511)A LAYERS OF (AL0.6GA0.4)0.5IN0.5P GROWN BY ATMOSPHERIC METALORGANIC VAPOR-PHASE EPITAXY [J].
MINAGAWA, S ;
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ELECTRONICS LETTERS, 1989, 25 (06) :413-414
[5]   DEPENDENCE OF PHOTOLUMINESCENCE PEAK ENERGY OF MOVPE-GROWN ALGAINP ON SUBSTRATE ORIENTATION [J].
MINAGAWA, S ;
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