OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE

被引：116
作者：
GYULAI, J
MAYER, JW
MITCHELL, IV
RODRIGUEZ, V
机构：
来源：
APPLIED PHYSICS LETTERS | 1970年 / 17卷 / 08期
关键词：
D O I：
10.1063/1.1653422
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：332 / +
页数：1
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共 8 条
[1]   VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].
ARTHUR, JR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2257-&
[2]   A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING ION-SCATTERING TECHNIQUE [J].
CHOU, S ;
DAVIDSON, LA ;
GIBBONS, JF .
APPLIED PHYSICS LETTERS, 1970, 17 (01) :23-&
[3]   DIFFUSION OF GALLIUM THROUGH SILICON DIOXIDE LAYER [J].
GROVE, AS ;
LEISTIKO, O ;
SAH, CT .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (09) :985-&
[4]  
GYULAI J, TO BE PUBLISHED
[5]   ENHANCED DIFFUSION AND OUT-DIFFUSION IN ION-IMPLANTED SILICON [J].
MEYER, O ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :4166-&
[6]  
MEYER O, TO BE PUBLISHED
[7]   DIFFUSION MEASUREMENTS IN THE SYSTEM CU-AU BY ELASTIC SCATTERING [J].
SIPPEL, RF .
PHYSICAL REVIEW, 1959, 115 (06) :1441-1445
[8]   DETERMINATION OF SURFACE CONTAMINATION ON SILICON BY LARGE ANGLE ION SCATTERING [J].
THOMPSON, DA ;
BARBER, HD ;
MACKINTOSH, WD .
APPLIED PHYSICS LETTERS, 1969, 14 (03) :102-+
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