ORGANOMETALLIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLARSENIC AS ARSENIC SOURCE

被引：23

作者：

FUJITA, S

UEMOTO, Y

ARAKI, S

IMAIZUMI, M

TAKEDA, Y

SASAKI, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 07期

关键词：

D O I：

10.1143/JJAP.27.1151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1151 / 1155

页数：5

共 12 条

[1] GROWTH OF HIGH-QUALITY GAAS USING TRIMETHYLGALLIUM AND DIETHYLARSINE [J].

BHAT, R ;

KOZA, MA ;

SKROMME, BJ .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1194-1196

[2] USE OF TERTIARYBUTYLARSINE FOR GAAS GROWTH [J].

CHEN, CH ;

LARSEN, CA ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1987, 50 (04) :218-220

[3] ORGANOMETALLIC VPE GROWTH OF GAAS1-YSBY USING TRIMETHYL ANTIMONY AND GA1-XINXAS USING TRIMETHYL ARSENIC [J].

COOPER, CB ;

LUDOWISE, MJ ;

AEBI, V ;

MOON, RL .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) :299-309

[4]

CUO CP, 1983, J CRYST GROWTH, V64, P461

[5] HALL-EFFECT, SCHOTTKY-BARRIER CAPACITANCE, AND PHOTOLUMINESCENCE SPECTRA MEASUREMENTS FOR GAAS EPITAXIAL LAYER AND THEIR CORRELATION [J].

KATODA, T ;

SUGANO, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (08) :1066-1073

[6] THE GROWTH AND CHARACTERIZATION OF UNIFORM GA1-XINXAS (X LESS-THAN-OR-EQUAL-TO .25) BY ORGANO-METALLIC VPE [J].

LUDOWISE, MJ ;

COOPER, CB ;

SAXENA, RR .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (06) :1051-1068

[7] USE OF TERTIARYBUTYLARSINE IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS [J].

LUM, RM ;

KLINGERT, JK ;

LAMONT, MG .

APPLIED PHYSICS LETTERS, 1987, 50 (05) :284-286

[8] RESIDUAL SHALLOW ACCEPTORS IN GAAS-LAYERS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY [J].

ROTH, AP ;

CHARBONNEAU, S ;

GOODCHILD, RG .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5350-5357

[9] ALTERNATIVES TO ARSINE - THE ATMOSPHERIC-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS USING TRIETHYLARSENIC [J].

SPECKMAN, DM ;

WENDT, JP .

APPLIED PHYSICS LETTERS, 1987, 50 (11) :676-678

[10] ELECTRON-MOBILITY IN ALXGA1-XAS [J].

STRINGFELLOW, GB .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4178-4183

← 1 2 →