TEMPERATURE-DEPENDENCE OF MINORITY ELECTRON-MOBILITY AND BANDGAP NARROWING IN P+ SI

被引：1

作者：

SWIRHUN, SE ^{[1
]}

KANE, DE ^{[1
]}

SWANSON, RM ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 11期

关键词：

D O I：

10.1109/T-ED.1987.23320

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2385 / 2385

页数：1

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