SOME POSSIBLE PARAMETRIC INTERACTIONS IN 3-V SEMICONDUCTORS

被引：0
作者：
GANDHI, OP
机构：
[1] Microwave Device and Phys. Electronics Lab., University of Utah, Salt Lake City, Utah
来源：
PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 05期
关键词：
D O I：
10.1109/PROC.1969.7076
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Some three-frequency phase-matched forward-wave parametric interactions possible in III—V “ionic” semiconductors ara discussed. A tunable infrared parametric oscillator. with frequency variable over a wide range with applied magnetic field, is shown to be feasible. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.
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页码：797 / &
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