SOME POSSIBLE PARAMETRIC INTERACTIONS IN 3-V SEMICONDUCTORS

被引：0

作者：

GANDHI, OP

机构：

[1] Microwave Device and Phys. Electronics Lab., University of Utah, Salt Lake City, Utah

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 05期

关键词：

D O I：

10.1109/PROC.1969.7076

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Some three-frequency phase-matched forward-wave parametric interactions possible in III—V “ionic” semiconductors ara discussed. A tunable infrared parametric oscillator. with frequency variable over a wide range with applied magnetic field, is shown to be feasible. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：797 / &

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