ER-DOPED INP AND GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

[1] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 943 - 945

[2] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 381 - 383

[3] PHOTOLUMINESCENCE OPTIMIZATION AND CHARACTERISTICS OF THE RARE-EARTH ELEMENT ERBIUM IMPLANTED IN GAAS, INP, AND GAP [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 601 - 610

[4] ERBIUM DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 49 - 51

[5] OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (25) : 1686 - 1688

[6] USHAKOV VV, 1981, SOV PHYS SEMICOND, V15, P352

[7] YB-DOPED INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 977 - 979

[8] SINGLE LONGITUDINAL MODE-OPERATION OF ER-DOPED 1.5-MU-M INGAASP LASERS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (19) : 1313 - 1315

[1] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 943 - 945

[2] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 381 - 383

[3] PHOTOLUMINESCENCE OPTIMIZATION AND CHARACTERISTICS OF THE RARE-EARTH ELEMENT ERBIUM IMPLANTED IN GAAS, INP, AND GAP [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 601 - 610

[4] ERBIUM DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 49 - 51

[5] OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (25) : 1686 - 1688

[6] USHAKOV VV, 1981, SOV PHYS SEMICOND, V15, P352

[7] YB-DOPED INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 977 - 979

[8] SINGLE LONGITUDINAL MODE-OPERATION OF ER-DOPED 1.5-MU-M INGAASP LASERS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (19) : 1313 - 1315