ER-DOPED INP AND GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：54
作者：
UWAI, K
NAKAGOME, H
TAKAHEI, K
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 13期
关键词：
D O I：
10.1063/1.98814
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1010 / 1012
页数：3
相关论文
共 8 条
[1]   1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].
ENNEN, H ;
SCHNEIDER, J ;
POMRENKE, G ;
AXMANN, A .
APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945
[2]   1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].
ENNEN, H ;
POMRENKE, G ;
AXMANN, A ;
EISELE, K ;
HAYDL, W ;
SCHNEIDER, J .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :381-383
[3]   PHOTOLUMINESCENCE OPTIMIZATION AND CHARACTERISTICS OF THE RARE-EARTH ELEMENT ERBIUM IMPLANTED IN GAAS, INP, AND GAP [J].
POMRENKE, GS ;
ENNEN, H ;
HAYDL, W .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :601-610
[4]   ERBIUM DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS [J].
SMITH, RS ;
MULLER, HD ;
ENNEN, H ;
WENNEKERS, P ;
MAIER, M .
APPLIED PHYSICS LETTERS, 1987, 50 (01) :49-51
[5]   OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS [J].
TSANG, WT ;
LOGAN, RA .
APPLIED PHYSICS LETTERS, 1986, 49 (25) :1686-1688
[6]  
USHAKOV VV, 1981, SOV PHYS SEMICOND, V15, P352
[7]   YB-DOPED INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
UWAI, K ;
NAKAGOME, H ;
TAKAHEI, K .
APPLIED PHYSICS LETTERS, 1987, 50 (15) :977-979
[8]   SINGLE LONGITUDINAL MODE-OPERATION OF ER-DOPED 1.5-MU-M INGAASP LASERS [J].
VANDERZIEL, JP ;
OBERG, MG ;
LOGAN, RA .
APPLIED PHYSICS LETTERS, 1987, 50 (19) :1313-1315
1