ATOMIC ORDERING IN GA0.47IN0.53AS AND GAXIN1-XASYP1-Y ALLOY SEMICONDUCTORS

被引：137

作者：

SHAHID, MA ^{[1
]}

MAHAJAN, S ^{[1
]}

LAUGHLIN, DE ^{[1
]}

COX, HM ^{[1
]}

机构：

[1] BELL COMMUN RES,RED BANK,NJ 07701

来源：

PHYSICAL REVIEW LETTERS | 1987年 / 58卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.58.2567

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2567 / 2570

页数：4

共 21 条

[1] SURFACE-LAYER SPINODAL DECOMPOSITION IN IN1-XGAXASYP1-Y AND IN1-XGAXAS GROWN BY HYDRIDE TRANSPORT VAPOR-PHASE EPITAXY [J].

CHU, SNG ;

NAKAHARA, S ;

STREGE, KE ;

JOHNSTON, WD .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) :4610-4615

[2] VAPOR LEVITATION EPITAXY - A NEW CONCEPT IN EPITAXIAL CRYSTAL-GROWTH [J].

COX, HM .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :641-643

[3]

COX HM, 1986, I PHYS C SER, V79, P735

[4]

DECREMOUX B, 1981, I PHYS C SER, V56, P115

[5]

EDINGTON JW, 1975, ELECTRON DIFFRACTION, V2, P70

[6]

GLAS F, 1985, I PHYS C SER, V76, P251

[7] EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION [J].

GOSSARD, AC ;

PETROFF, PM ;

WEIGMANN, W ;

DINGLE, R ;

SAVAGE, A .

APPLIED PHYSICS LETTERS, 1976, 29 (06) :323-325

[8] COMPOSITION MODULATION IN LIQUID-PHASE EPITAXIAL INXGA1-XASYP1-Y LAYERS LATTICE MATCHED TO INP SUBSTRATES [J].

HENOC, P ;

IZRAEL, A ;

QUILLEC, M ;

LAUNOIS, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :963-965

[9] ORDERED STRUCTURES IN GAAS0.5SB0.5 ALLOYS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

JEN, HR ;

CHERNG, MJ ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1986, 48 (23) :1603-1605

[10] LONG-RANGE ORDER IN ALXGA1-XAS [J].

KUAN, TS ;

KUECH, TF ;

WANG, WI ;

WILKIE, EL .

PHYSICAL REVIEW LETTERS, 1985, 54 (03) :201-204

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