2-PHOTON ABSORPTION OF NEODYMIUM LASER-RADIATION IN GALLIUM-ARSENIDE

被引：29

作者：

BOSACCHI, B ^{[1
]}

BESSEY, JS ^{[1
]}

JAIN, FC ^{[1
]}

机构：

[1] UNIV CONNECTICUT,DEPT ELECT ENGN,STORRS,CT 06268

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 08期

关键词：

D O I：

10.1063/1.325444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4609 / 4611

页数：3

共 16 条

[1]

ARSENEV VV, 1966, SOV PHYS JETP, V29, P413

[2]

BASOV NG, 1966, SOV PHYS JETP-USSR, V23, P366

[3] 2-PHOTON ABSORPTION IN SEMICONDUCTORS WITH PICOSECOND LASER-PULSES [J].

BECHTEL, JH ;

SMITH, WL .

PHYSICAL REVIEW B, 1976, 13 (08) :3515-3522

[4] ANISOTROPY OF 2-PHOTON ABSORPTION IN GAAS AND CDTE [J].

BEPKO, SJ .

PHYSICAL REVIEW B, 1975, 12 (02) :669-672

[5]

BOSACCHI B, UNPUBLISHED

[6]

BOSACCHI B, COHERENCE SPECTROSCO

[7]

GRASYUK AZ, 1973, JETP LETT+, V17, P416

[8]

Gvardzhaladze T. L., 1973, Soviet Physics - JETP, V37, P227

[9] OBSERVATION OF 2-PHOTON CONDUCTIVITY IN GAAS WITH NANOSECOND AND PICOSECOND LIGHT-PULSES [J].

JAYARAMAN, S ;

LEE, CH .

APPLIED PHYSICS LETTERS, 1972, 20 (10) :392-+

[10] 2-PHOTON ABSORPTION OF ND LASER RADIATION IN GAAS [J].

KLEINMAN, DA ;

MILLER, RC ;

NORDLAND, WA .

APPLIED PHYSICS LETTERS, 1973, 23 (05) :243-244

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