2-PHOTON ABSORPTION OF NEODYMIUM LASER-RADIATION IN GALLIUM-ARSENIDE

被引：29

作者：

BOSACCHI, B ^{[1
]}

BESSEY, JS ^{[1
]}

JAIN, FC ^{[1
]}

机构：

[1] UNIV CONNECTICUT,DEPT ELECT ENGN,STORRS,CT 06268

来源：

关键词：

D O I：

10.1063/1.325444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4609 / 4611

页数：3

共 16 条

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[2] BASOV NG, 1966, SOV PHYS JETP-USSR, V23, P366
[3] 2-PHOTON ABSORPTION IN SEMICONDUCTORS WITH PICOSECOND LASER-PULSES
BECHTEL, JH
SMITH, WL
[J]. PHYSICAL REVIEW B, 1976, 13 (08) : 3515 - 3522
[4] ANISOTROPY OF 2-PHOTON ABSORPTION IN GAAS AND CDTE
BEPKO, SJ
[J]. PHYSICAL REVIEW B, 1975, 12 (02): : 669 - 672
[5] BOSACCHI B, UNPUBLISHED
[6] BOSACCHI B, COHERENCE SPECTROSCO
[7] GRASYUK AZ, 1973, JETP LETT+, V17, P416
[8] Gvardzhaladze T. L., 1973, Soviet Physics - JETP, V37, P227
[9] OBSERVATION OF 2-PHOTON CONDUCTIVITY IN GAAS WITH NANOSECOND AND PICOSECOND LIGHT-PULSES
JAYARAMAN, S
LEE, CH
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (10) : 392 - +
[10] 2-PHOTON ABSORPTION OF ND LASER RADIATION IN GAAS
KLEINMAN, DA
MILLER, RC
NORDLAND, WA
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (05) : 243 - 244