SINGLE-PASS GAIN MEASUREMENTS ON OPTICALLY PUMPED ALXGA(1-X)AS-ALYGA(1-Y)AS DOUBLE-HETEROJUNCTION LASER STRUCTURES AT ROOM-TEMPERATURE

被引：20

作者：

BAKKER, J ^{[1
]}

ACKET, GA ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1977年 / 13卷 / 08期

关键词：

D O I：

10.1109/JQE.1977.1069430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：567 / 573

页数：7

共 18 条

[1] ELECTRON LIFETIME AND DIFFUSION CONSTANT IN GERMANIUM-DOPED GALLIUM-ARSENIDE [J].

ACKET, GA ;

NIJMAN, W ;

LAM, HT .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3033-3040

[2]

ACKET GA, 1975, I PHYS C SER, V24, P181

[3]

ACKET GA, 1974, SEP S GAAS REL COMP

[4] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].

CASEY, HC ;

MILLER, BI ;

PINKAS, E .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1281-1287

[5] THEORY OF OPTICAL-GAIN MEASUREMENTS [J].

CROSS, PS ;

OLDHAM, WG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (05) :190-197

[6] LASER EMISSION DUE TO EXCITONIC RECOMBINATION PROCESSES IN HIGH-PURITY GAAS [J].

GOBEL, E ;

HERZOG, H ;

PILKUHN, MH ;

ZSCHAUER, KH .

SOLID STATE COMMUNICATIONS, 1973, 13 (06) :719-722

[7]

GOBEL E, 1976, 5TH IEEE SEM LAS C N

[8] GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].

HAKKI, BW ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1299-1306

[9] SPATIAL-DISTRIBUTION OF LIGHT-INTENSITY IN INJECTION LASERS [J].

HASUO, S ;

OHMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (09) :1429-1434

[10] SIMPLE METHOD FOR OBTAINING LUMINESCENT PATTERN OF DOUBLE HETEROSTRUCTURE CRYSTALS [J].

ITO, R ;

NAKASHIMA, H ;

NAKADA, O .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (08) :1272-1274

← 1 2 →