DETERMINATION OF INTERVALLEY ELECTRON-PHONON DEFORMATION-POTENTIAL CONSTANTS IN NORMAL-SILICON BY ANALYSIS OF HIGH-ELECTRIC-FIELD TRANSPORT PROPERTIES

被引：8

作者：

NASH, JG ^{[1
]}

HOLMKENNEDY, JW ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,SCH ENGN & APPL SCI,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.15.3994

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3994 / 4006

页数：13

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[8] STUDY OF INTERVALLEY SCATTERING IN N-SI BY STRESS-DEPENDENT LONGITUDINAL MAGNETOPHONON RESONANCE [J].

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