HIGH-QUALITY INGAN FILMS BY ATOMIC LAYER EPITAXY

被引：36

作者：

BOUTROS, KS ^{[1
]}

MCINTOSH, FG ^{[1
]}

ROBERTS, JC ^{[1
]}

BEDAIR, SM ^{[1
]}

PINER, EL ^{[1
]}

ELMASRY, NA ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 13期

关键词：

D O I：

10.1063/1.114355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InxGa1-xN single-crystal films were grown at 600-700 degrees C by atomic layer epitaxy (ALE). InGaN films with compositions of up to 27% indium were achieved. The full width at half-maximum (FWHM) of the (0002) InxGa1-xN peak by double crystal x-ray diffraction (DCXRD) was as small as 6 min, the lowest value reported for this ternary alloy. Strong photoluminescence band edge emission between 360 and 446 nm was observed at room temperature. These low temperature ALE grown films were achieved without the need to use excessive flows of the In organometallic source and thus demonstrate the potential for growth of this ternary alloy over the entire composition range. (C) 1995 American Institute of Physics.

引用

页码：1856 / 1858

页数：3

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