Spectroscopy studies of highly acceptor doped GaAs/AlGaAs quantum wells

被引：3
作者：
Ferreira, AC
Holtz, PO
Sernelius, BE
Buyanov, A
Monemar, B
Mauritz, O
Ekenberg, U
Sundaram, M
Campman, K
Merz, JL
Gossard, AC
机构：
[1] ROYAL INST TECHNOL,DEPT PHYS,S-10044 STOCKHOLM,SWEDEN
[2] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT,SANTA BARBARA,CA 93016
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1995年 / 18卷 / 02期
关键词：
D O I：
10.1006/spmi.1995.1100
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We present a theoretical and experimental study of optical properties on highly acceptor doped QWs. Steady state photoluminescence (PL) and PL excitation (PLE) results are compared with theoretical calculations involving exchange and correlation effects for the electron-hole system and their interaction with acceptor ions. We have studied the effects of impurity doping at levels varying from 10(8) up to 10(13) cm(-2). Excitons can still be detected at high hole concentrations above the degenerate limit. They survive due to the inefficiency of screening in the 2D system. (C) 1995 Academic Press Limited
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页码：153 / 159
页数：7
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