Lattice defects in non-stoichiometric CuInSe2 thin films

被引：0
|
作者：
Thanner, E [1 ]
Eibl, O [1 ]
Pongratz, P [1 ]
机构：
[1] SIEMENS AG,RES LABS,W-8000 MUNICH,GERMANY
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 | 1995年 / 146卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A HREM characterisation of dislocations, twins and planar defects is given. A correlation of the size of platelike defects and their number densities for different nonstoichiometric CuInSe2 films is presented, the Cu/In/Se concentrations of which have been measured locally by EDX analysis.
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页码：329 / 332
页数：4
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