ELASTIC LATTICE DEFORMATION IN QUANTUM-WIRE HETEROSTRUCTURES

被引:35
作者
DECARO, L
TAPFER, L
机构
[1] Centro Nazionale Ricerca e Sviluppo Materiali (CNRSM), I-72100 Brindisi
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 16期
关键词
D O I
10.1103/PhysRevB.49.11127
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the lattice deformation of quantum-wire heterostructures with cubic symmetry deposited on arbitrarily oriented substrate surfaces. The elasic strain and the stress-tensor components are calculated by using Hooke's law and applying the appropriate boundary conditions at the wire-substrate interface. We assume that the lattice coherence at the wire-substrate interface is achieved only along the wire direction, due to the limted lateral extension of the wires. We show that either a tetragonal or an orthorhombic or a lower-symmetry lattice deformation of the quantum-wire structure may occur depending on the coherence direction and substrate orientation. In some particular cases, even for high-symmetry substrate orientations ([001] and [110]), it is possible to obtain one shear strain element different from zero, leading to a monoclinic lattice deformation. Moreover, for the [111] or low-symmetry substrate orientations a triclinic lattice deformation can also be obtained. In the case of an orthorhombic lattice deformation our theoretical results are found to be in good agreement with the few experimental data available.
引用
收藏
页码:11127 / 11133
页数:7
相关论文
共 14 条
[1]   A MACROSCOPIC APPLICATION OF THE WIGNER-ECKART THEOREM [J].
ANASTASSAKIS, E ;
LIAROKAPIS, E .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1988, 149 (01) :K1-K5
[2]   ELASTIC LATTICE DEFORMATION OF SEMICONDUCTOR HETEROSTRUCTURES GROWN ON ARBITRARILY ORIENTED SUBSTRATE SURFACES [J].
DECARO, L ;
TAPFER, L .
PHYSICAL REVIEW B, 1993, 48 (04) :2298-2303
[3]  
DECARO L, UNPUB
[4]  
Fitzgerald E. A., 1991, Material Science Reports, V7, P87, DOI 10.1016/0920-2307(91)90006-9
[5]   INFLUENCE OF SUBSTRATE COMPOSITION AND CRYSTALLOGRAPHIC ORIENTATION ON THE BAND-STRUCTURE OF PSEUDOMORPHIC SI-GE ALLOY-FILMS [J].
HINCKLEY, JM ;
SINGH, J .
PHYSICAL REVIEW B, 1990, 42 (06) :3546-3566
[6]  
HINCKLEY JM, 1991, APPL PHYS LETT, V60, P2694
[7]   EFFECT OF MISMATCH STRAIN ON BAND-GAP IN III-V SEMICONDUCTORS [J].
KUO, CP ;
VONG, SK ;
COHEN, RM ;
STRINGFELLOW, GB .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5428-5432
[8]  
MADELUNG O, 1982, LANDOLTBORNSTEIN NUM, V17, P62907
[9]   ELECTRONIC-STRUCTURE OF [001]-GROWTH-AXIS AND [111]-GROWTH-AXIS SEMICONDUCTOR SUPERLATTICES [J].
MAILHIOT, C ;
SMITH, DL .
PHYSICAL REVIEW B, 1987, 35 (03) :1242-1259
[10]  
MAILHIOT C, 1990, REV MOD PHYS, V62, P173