ANOMALOUS AS DESORPTION FROM INAS(100) 2X4

被引：24

作者：

SASAOKA, C

KATO, Y

USUI, A

机构：

[1] Fundamental Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 19期

关键词：

D O I：

10.1063/1.109410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Arsenic desorption from the InAs(100) 2X4 surface is investigated through temperature programmed desorption (TPD), isothermal desorption, and reflection high-energy electron diffraction. TPD area analysis indicates that the As coverage, theta(As), of the InAs 2X4 structure is 0.7 monolayers. The As TPD spectrum shows two desorption features; a broad tail from 300 to 400-degrees-C and a distinct peak at 430-degrees-C. The 430-degrees-C peak is well described in terms of a first-order-desorption kinetics with a preexponential factor nu of 1.5X10(19) s-1. This extremely high nu value explains well the narrow window of optimal molecular beam epitaxy growth conditions for InAs.

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页码：2338 / 2340

页数：3

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