ANOMALOUS AS DESORPTION FROM INAS(100) 2X4

被引：24
作者：
SASAOKA, C
KATO, Y
USUI, A
机构：
[1] Fundamental Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 19期
关键词：
D O I：
10.1063/1.109410
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Arsenic desorption from the InAs(100) 2X4 surface is investigated through temperature programmed desorption (TPD), isothermal desorption, and reflection high-energy electron diffraction. TPD area analysis indicates that the As coverage, theta(As), of the InAs 2X4 structure is 0.7 monolayers. The As TPD spectrum shows two desorption features; a broad tail from 300 to 400-degrees-C and a distinct peak at 430-degrees-C. The 430-degrees-C peak is well described in terms of a first-order-desorption kinetics with a preexponential factor nu of 1.5X10(19) s-1. This extremely high nu value explains well the narrow window of optimal molecular beam epitaxy growth conditions for InAs.
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页码：2338 / 2340
页数：3
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