DIRECT OBSERVATION OF SILICIDE GROWTH AT FE-SI INTERFACE DURING PULSED-LASER DEPOSITION

被引：20
作者：
CHUBUNOVA, EV
KHABELASHVILI, ID
LEBEDINSKII, YY
NEVOLIN, VN
ZENKEVICH, A
机构：
[1] Moscow Engineering Physics Institute
来源：
THIN SOLID FILMS | 1994年 / 247卷 / 01期
关键词：
D O I：
10.1016/0040-6090(94)90473-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Using X-ray photoelectron spectroscopy, the layer-by-layer growth of iron silicides has been studied in situ during pulsed laser deposition. Successive layers of FeSi2, FeSi and metallic Fe were identified in the case of Fe deposition on Si(100) substrate, while for Si deposition on Fe substrate practically no silicide was found to grow at the interface. The nature of the Fe-Si interaction at the interface is supposed to depend on the type and energy of the depositing particles.
引用
收藏
页码：39 / 43
页数：5
相关论文
共 12 条
  • [1] BYKOVSKII YA, 1987, ZH EKSP TEOR FIZ, V66, P285
  • [2] COHEN RL, 1981, MATER RES SOC S P, V3, P357
  • [3] BONDING STATE OF SILICON SEGREGATED TO ALPHA-IRON SURFACES AND ON IRON SILICIDE SURFACES STUDIED BY ELECTRON-SPECTROSCOPY
    EGERT, B
    PANZNER, G
    [J]. PHYSICAL REVIEW B, 1984, 29 (04): : 2091 - 2101
  • [4] FELDMAN LC, 1986, FUNDAMENTALS SURFACE, P139
  • [5] MOSSBAUER STUDY OF AMORPHOUS THIN FE-SI FILMS PRODUCED BY ION MIXING
    HAYASHI, N
    SAKAMOTO, I
    TANOUE, H
    TORIYAMA, T
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1988, 106 (04): : 265 - 270
  • [6] A REASSESSMENT OF ELECTRON-ESCAPE DEPTHS IN SILICON AND THERMALLY GROWN SILICON DIOXIDE THIN-FILMS
    HOCHELLA, MF
    CARIM, AH
    [J]. SURFACE SCIENCE, 1988, 197 (03) : L260 - L268
  • [7] KHABELASHVILI I, 1992, IZV ROS AKAD NAUK P, V56, P150
  • [8] KHABELASHVILI ID, 1993, UNPUBLISHED
  • [9] XPS INVESTIGATIONS OF FESI, FESI2 AND FE IMPLANTED IN SI AND GE
    KINSINGER, V
    DEZSI, I
    STEINER, P
    LANGOUCHE, G
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (22) : 4955 - 4961
  • [10] SILNOV SM, 1989, THESIS MOSCOW ENG PH
12