MODULATION EFFECT BY INTENSE HOLE INJECTION IN EPITAXIAL SILICON SCHOTTKY-BARRIER-DIODES

被引：10

作者：

JAGER, H

KOSAK, W

机构：

[1] BATTELLE INST V,FRANKFURT,WEST GERMANY

[2] AEG TELEFUNKEN,HEILBRONN,WEST GERMANY

来源：

关键词：

D O I：

10.1016/0038-1101(73)90010-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：357 / 364

页数：8

共 13 条

[1] ABDULLAYEV GB, 1966, RADIO ENG ELECTRON P, V11, P1012
[2] ATALLA MM, 1967, MIKROELEKTRONIK, V2, P124
[3] ATALLA MM, 1967, MICROELECTRONIC C MU
[4] BARNA AA, 1971, IEEE T CIRCUIT THEOR, VCT18, P233
[5] BULLIS MW, 1966, SOLID STATE ELECTRON, V9, P143
[6] HANNAY NB, 1960, SEMICONDUCTORS, P490
[7] METAL SEMICONDUCTOR CONTACT BARRIERS OF METALS IN GROUP-1B AND GROUP-8 ON SILICON AND GERMANIUM
JAGER, H
KOSAK, W
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (07) : 511 - &
[8] JAGER H, TO BE PUBLISHED
[9] ROSENZWEIG W, 1965, IEEE T NUCL SCI, VNS12, P18
[10] MINORITY CARRIER INJECTION AND CHARGE STORAGE IN EPITAXIAL SCHOTTKY BARRIER DIODES
SCHARFETTER, DL
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 299 - +