ELECTRICAL CHARACTERISTICS OF AL CONTACT TO NISI USING THIN W LAYER AS A BARRIER

被引：16

作者：

BARTUR, M

NICOLET, MA

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 10期

关键词：

D O I：

10.1063/1.92571

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：822 / 824

页数：3

共 15 条

[1]

BARTUR M, UNPUBLISHED

[2] NATURE OF BARRIER HEIGHT VARIATIONS IN ALLOYED AL-SI SCHOTTKY-BARRIER DIODES [J].

BASTERFIELD, J ;

SHANNON, JM ;

GILL, A .

SOLID-STATE ELECTRONICS, 1975, 18 (03) :290-&

[3] PREPARATION OF LARGE-AREA MONO-CRYSTALLINE SILICON THIN WINDOWS [J].

CHEUNG, NW .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1980, 51 (09) :1212-1216

[4] SILICIDE FORMATION IN NI-SI SCHOTTKY-BARRIER DIODES [J].

COE, DJ ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (06) :965-972

[5] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J].

GEIPEL, HJ ;

HSIEH, N ;

ISHAQ, MH ;

KOBURGER, CW ;

WHITE, FR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1417-1424

[6]

GEIPEL HJ, 1980, IEEE J SOLID STATE C, V12, P482

[7] STUDY OF AL-PD2SI CONTACTS ON SI [J].

GRINOLDS, H ;

ROBINSON, GY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :75-78

[8] ALUMINUM-NICKEL SILICIDE CONTACTS ON SILICON [J].

HOKELEK, E ;

ROBINSON, GY .

THIN SOLID FILMS, 1978, 53 (02) :135-140

[9] ELECTRICAL AND MECHANICAL FEATURES OF PLATINUM SILICIDE-ALUMINUM REACTION [J].

HOSACK, HH .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) :3476-3485

[10] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].

MURARKA, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792

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