SHIFTS OF PHOTODETACHMENT THRESHOLDS AND INDUCED SHAPE RESONANCES OF H- IN AN ELECTRIC-FIELD

被引：7
|
作者：
BIN, Z
LIN, CD
机构：
[1] Department of Physics, Kansas State University, Manhattan
来源：
PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 23期
关键词：
D O I：
10.1103/PhysRevLett.69.3294
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The photodetachment of H- near the H(N = 4) and H(N = 5) thresholds in an external electric field is studied theoretically. The recently observed photodetachment threshold shifts by Halka et al. are interpreted in terms of the shifts of the barrier heights of the hyperspherical potential curves as the electric field strength is varied. It is shown that higher members of the zero-field Feshbach resonances can emerge as field-induced shape resonances in an electric field.
引用
收藏
页码：3294 / 3297
页数：4
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