EFFECT OF GROWTH INTERRUPTIONS ON ULTRA-THIN INAS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY

被引：6
作者：
CARLIN, JF
RUDRA, A
HOUDRE, R
RUTERANA, P
ILEGEMS, M
机构：
[1] Institute for Micro- and Optoelectronics, Department of Physics, Ecole Polytechnique Fédérale de Lausanne
来源：
JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(92)90381-R
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have studied the effect of growth interruptions on 2 monolayer thick InAs/InP strained quantum wells (QWS) grown by chemical beam epitaxy. The main feature is the formation of up to 8 monolayer thick InAs islands during As, annealing of the QW. Their formation is characterized by a two- to three-dimensional transition of the reflection high energy electron diffraction (RHEED) pattern and by multiple-line photoluminescence spectra. This interpretation of the data is confirmed by transmission electron microscopy (TEM).
引用
收藏
页码：155 / 156
页数：2
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