HIGH-MOBILITY AND HIGH-STABILITY A-SI-H THIN-FILM TRANSISTORS WITH SMOOTH SINX/A-SI INTERFACE

被引：36
|
作者：
UCHIDA, H
TAKECHI, K
NISHIDA, S
KANEKO, S
机构：
[1] Functional Devices Research Laboratories, NEC Corporation, Miyamae-ku, Kawasaki, 216
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期
关键词：
A-SI; H TFT; SURFACE MORPHOLOGY; ATOMIC FORCE MICROSCOPE; SMOOTH SURFACE; FIELD EFFECT MOBILITY; INSTABILITY;
D O I：
10.1143/JJAP.30.3691
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Through use of an atomic force microscope (AFM), surface morphologies for SiNx and a-Si:H films were investigated. By controlling deposition conditions, very smooth films have been obtained. The thin film transistor (TFT) with smooth a-Si:H on smooth SiNx has both high mobility (1.0 cm2.V-1.s-1) and high stability at the same time. This high-performance TFT will make an important impact in application to high-pixel-density liquid crystal displays (LCDs), such as for use in workstations and high-definition television (HDTV).
引用
收藏
页码：3691 / 3694
页数：4
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