O-17 HYPERFINE-STRUCTURE OF NEUTRAL (S=1) VACANCY-OXYGEN CENTER IN ION-IMPLANTED SILICON

被引：21

作者：

BROWER, KL

机构：

来源：

PHYSICAL REVIEW B | 1972年 / 5卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.5.4274

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4274 / &

共 8 条

[1] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON
BEMSKI, G
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1195 - 1198
[2] ELECTRON PARAMAGNETIC RESONANCE OF NEUTRAL (S=1) ONE-VACANCY-OXYGEN CENTER IN IRRADIATED SILICON
BROWER, KL
[J]. PHYSICAL REVIEW B, 1971, 4 (06): : 1968 - &
[3] HYPERFINE STRUCTURE IN GROUND MULTIPLETS OF 17O AND 19F
HARVEY, JSM
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1965, 285 (1403): : 581 - &
[4] MANN JB, UNPUBLISHED
[5] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON
WATKINS, GD
CORBETT, JW
WALKER, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1198 - 1203
[6] DEFECTS IN IRRADIATED SILICON .1. ELECTRON SPIN RESONANCE OF SI-A CENTER
WATKINS, GD
CORBETT, JW
[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1001 - &
[7] ZELLER HR, 1967, HELV PHYS ACTA, V40, P845
[8] [No title captured]