ULTRALOW THRESHOLD MULTIQUANTUM WELL INGAAS LASERS

被引：21

作者：

CHEN, TR ^{[1
]}

ZHAO, B ^{[1
]}

ZHUANG, YH ^{[1
]}

YARIV, A ^{[1
]}

UNGAR, JE ^{[1
]}

OH, S ^{[1
]}

机构：

[1] ORTEL CORP,ALHAMBRA,CA 91803

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 15期

关键词：

D O I：

10.1063/1.107186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultralow threshold currents have been obtained in multiquantum well strained-layer InGaAs lasers. A cw threshold current of 1 mA in an uncoated double quantum well laser and a 0.35 mA (pulsed threshold current 0.25 mA) in a coated laser are demonstrated.

引用

页码：1782 / 1784

页数：3

共 7 条

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