共 50 条
- [21] INFLUENCE OF AN INHOMOGENEOUS DISTRIBUTION OF IMPURITIES ON PHOTOELECTRIC CHARACTERISTICS OF RESISTOR STRUCTURES BASED ON GAAS1-XSBX SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (05): : 491 - 494
- [22] PHOTO-LUMINESCENCE OF GAAS1-XSBX AND GA1-XINXAS (X-LESS-THAN-0.01) SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (01): : 68 - 72
- [23] Raman spectra of MBE-grown GaAs1-xSbx Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, 1991, 10 (05): : 321 - 325
- [24] CHARACTERISTICS OF THE PHOTO-IONIZATION OF DEEP LEVELS IN GALLIUM-ARSENIDE AND GAAS1-XSBX FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (02): : 202 - 205
- [25] SELECTIVE PHOTORECEPTION BASED ON VARIZONE GAAS1-XSBX STRUCTURE PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1984, 10 (07): : 388 - 391
- [28] PHOTO-LUMINESCENCE OF GAAS1-XSBX(0 LESS-THAN X LESS-THAN 0.01)SOLID SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 1076 - 1078