DEMONSTRATION OF INGAAS ALGAAS STRAINED-LAYER DISTRIBUTED-FEEDBACK GRATING-SURFACE-EMITTING LASERS WITH A BURIED 2ND-ORDER GRATING STRUCTURE

被引：9

作者：

LIEW, SK

CARLSON, NW

BOUR, DP

EVANS, GA

VANGIESON, E

机构：

[1] David Sarnoff Research Center, Princeton

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 03期

关键词：

D O I：

10.1063/1.104697

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated InGaAs/AlGaAs strained-layer distributed-feedback grating-surface-emitting lasers with a buried grating structure. The device consists of a pumped distributed-feedback section terminated on both sides by unpumped distributed Bragg reflector sections. cw operation in a stable single longitudinal mode is achieved up to six times threshold. The threshold current density is approximately 600 A/cm2. The far-field beam divergence is predominantly single lobed and diffraction limited. The spectral linewidth is 1.0 MHz at an output power of 8 mW.

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页码：228 / 230

页数：3

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