VAPOR GROWTH OF A SEMICONDUCTOR SUPERLATTICE

被引:32
作者
BLAKESLE.AE
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D O I
10.1149/1.2408354
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1459 / &
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共 7 条
[1]   STRESSES IN HETEROEPITAXIAL LAYERS - GAAS1-XPX ON GAAS [J].
ABRAHAMS, MS ;
WEISBERG, LR ;
TIETJEN, JJ .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3754-&
[2]  
BARRETT CS, 1966, STRUCTURE METALS, pCH11
[3]  
BLAKESLEE AE, 1969, T METALL SOC AIME, V245, P577
[4]   SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].
ESAKI, L ;
TSU, R .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&
[5]  
ESAKI L, 1970, SEP P INT C LOW TEMP
[6]   COMPOSITIONAL INHOMOGENEITIES IN GAAS1-XPX ALLOY EPITAXIAL LAYERS [J].
EWING, RE ;
SMITH, DK .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) :5943-&
[7]   PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J].
TIETJEN, JJ ;
AMICK, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :724-&