INTERFERENCE BETWEEN ELECTRONIC AND LO-VIBRONIC INELASTIC LIGHT-SCATTERING IN PERIODICALLY DELTA-DOPED GAAS

被引：9

作者：

IORIATTI, L

机构：

[1] Instituto De Fisica E Quimica De SÃo Carlos, Universidade De SÃo Paulo, Sao Carlos, Sao Paulo

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.43.14742

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The recently observed asymmetry in the Raman lines of periodically delta-doped GaAs in the region of the LO phonon is theoretically interpreted as the interference of a continuum of single-particle transitions with the LO one-phonon line. The dependence of the line shape on the exciting frequency is produced by the difference in resonant behavior exhibited by these two light-scattering mechanisms.

引用

页码：14742 / 14745

页数：4

共 15 条

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