PHYSICOCHEMICAL PROPERTIES OF SI-B ALLOYS

被引:18
|
作者
LUKIN, SV
ZHUCHKOV, VI
VATOLIN, NA
KOZLOV, YS
机构
来源
JOURNAL OF THE LESS-COMMON METALS | 1979年 / 67卷 / 02期
关键词
D O I
10.1016/0022-5088(79)90019-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:407 / 413
页数:7
相关论文
共 50 条
  • [21] ON THE ENERGY OF INTERACTION IN THE SI-B SYSTEM
    CHUBINIDZE, TA
    OKLEY, AL
    ZHURULI, MA
    RUSSIAN METALLURGY, 1982, (03): : 175 - 178
  • [23] Anisotropic magnetoresistance effect in amorphous and nanocrystalline Fe(Cu,Nb)-Si-B alloys
    Li, DR
    Lu, ZC
    Li, GQ
    Xianyu, Z
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2000, 16 (02) : 165 - 166
  • [24] PREPARATION AND STUDY OF THE ELECTRICAL-PROPERTIES OF N-TYPE BORON AND SI-B ALLOYS WITH A HIGH BORON CONCENTRATION
    DUSSEAU, JM
    ROBERT, JL
    ARMAS, B
    COMBESCURE, C
    JOURNAL OF THE LESS-COMMON METALS, 1981, 82 (1-2): : 137 - 142
  • [25] EFFECT OF SURFACE-TENSION AND DENSITY ON THE OXIDATION-KINETICS OF SI-B ALLOYS
    LUKIN, SV
    ZHUCHKOV, VI
    RUSSIAN METALLURGY, 1978, (05): : 42 - 45
  • [26] STRUCTURE INVESTIGATIONS ON ANNEALED FE(CUNB)SIB ALLOYS WITH DIFFERENT SI-B CONTENTS
    HAMPEL, G
    GRAF, T
    KORUS, J
    FRICKE, M
    HESSE, J
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1995, 149 (02): : 515 - 533
  • [27] Investigation on the magnetostriction of nanocrystalline Fe-(Cu-Nb)-Si-B alloys
    Lu, Zhichao
    Xianyu, Ze
    Zhou, Fei
    1600, (15):
  • [28] INVESTIGATION ON THE MAGNETOSTRICTION OF NANOCRYSTALLINE FE-(CU-NB)-SI-B ALLOYS
    LU, ZC
    XIANYU, Z
    CHEN, TG
    CHENG, ZW
    ZHOU, F
    LU, MQ
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1995, 140 (pt 1) : 421 - 422
  • [29] GLASS-TRANSITION BEHAVIOR OF (FE, CO, NI)-SI-B AMORPHOUS-ALLOYS
    INOUE, A
    YAMAMOTO, H
    MASUMOTO, T
    MATERIALS TRANSACTIONS JIM, 1989, 30 (09): : 677 - 683
  • [30] Dielectric properties and corona resistance of Si-B/epoxy nano-composites
    Wei Zhao
    Yong Fan
    Hao Chen
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 16298 - 16307