MOCVD-GROWN ALLNAS/GALNAS MODFET WITH DRAIN CURRENTS HIGHER THAN 1.3A/MM

被引：9

作者：

HONG, WP

CHANG, GK

BHAT, R

CHAN, W

VANDERGAAG, B

LIN, P

ABELES, JH

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 09期

关键词：

D O I：

10.1049/el:19890395

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：580 / 581

页数：2

共 7 条

[1] HIGH-SPEED INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

FUKANO, H ;

KAWAMURA, Y ;

TAKANASHI, Y .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (06) :312-314

[2]

HIROSE K, 1986, I PHYS C SER, V79, P529

[3]

Ho P., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P184, DOI 10.1109/IEDM.1988.32785

[4] HIGH-TRANSCONDUCTANCE ALLNAS/GAINAS HIFETS GROWN BY MOCVD [J].

KAMADA, M ;

KOBAYASHI, T ;

ISHIKAWA, H ;

MORI, Y ;

KANEKO, K ;

KOJIMA, C .

ELECTRONICS LETTERS, 1987, 23 (06) :297-298

[5] W/WSI GATE SELF-ALIGNED HIFETS (HETEROINTERFACE FETS) USING AN ALINAS/GAINAS HETEROSTRUCTURE GROWN BY MOCVD [J].

KAMADA, M ;

ISHIKAWA, H ;

KANEKO, K ;

WATANABE, N .

ELECTRONICS LETTERS, 1988, 24 (05) :271-272

[6]

Mishra U. K., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P180, DOI 10.1109/IEDM.1988.32784

[7] SELF-ALIGNED ALINAS/GAINASHBTS FOR DIGITAL IC-APPLICATIONS [J].

TANAKA, S ;

FURUKAWA, A ;

BABA, T ;

OHTA, K ;

MADIHIAN, M ;

HONJO, K .

ELECTRONICS LETTERS, 1988, 24 (14) :872-873

← 1 →