EFFECT OF ASCL3 CONCENTRATION ON IMPURITY INCORPORATION IN VAPOR GROWN EPITAXIAL GAAS

被引：0
|
作者：
CAIRNS, B
FAIRMAN, R
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C197 / &
相关论文
共 50 条
  • [21] DETERMINING CONCENTRATION OF MICROADMIXTURES DURING ANALYSIS OF HIGHLY PURE ASCL3
    SHEMET, VV
    NOVIKOV, VB
    ANTRAPTS.NF
    VLASOV, VS
    YAZIKOV, IF
    NEKRASOV, VV
    ZAVODSKAYA LABORATORIYA, 1973, (03): : 271 - 272
  • [22] IMPURITY TRANSFER IN GAAS VAPOR GROWTH AND CARRIER-CONCENTRATION PROFILES OF GROWN FILMS
    HASEGAWA, F
    SAITO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (11) : 1342 - &
  • [23] Impurity incorporation and the surface morphology of MOVPE grown GaAs
    Li, J
    Kuech, TF
    JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (02) : 124 - 133
  • [24] Impurity incorporation and the surface morphology of MOVPE grown GaAs
    Jiang Li
    T. F. Kuech
    Journal of Electronic Materials, 1999, 28 : 124 - 133
  • [25] ASCL3 FLOW-RATE DEPENDENCE ON PROPERTIES OF EPITAXIALLY GROWN GALLIUM ARSENIDE
    AOKI, T
    YAMAGUCHI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (07) : 953 - +
  • [26] SN INCORPORATION AND ELECTRON-CONCENTRATION IN VAPOR-PHASE EPITAXIALLY GROWN GAAS
    MAIER, M
    HANEL, B
    BALK, P
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 342 - 343
  • [27] Impurity incorporation during epitaxial growth of GaAs by chemical reaction
    Gandouzi, M
    Bourgoin, JC
    Mimila-Arroyo, J
    Grattepain, C
    Grattepain, C
    JOURNAL OF CRYSTAL GROWTH, 2000, 218 (2-4) : 167 - 172
  • [28] DEPENDENCE OF THE GROWTH-RATE OF INAS EPITAXIAL LAYERS ON ASCL3 PRESSURE IN THE INAS-ASCL3-H2 SYSTEM
    ALEKSANDROVA, GA
    IVONIN, IV
    KRASILNIKOVA, LM
    LAVRENTYEVA, LG
    PASHCHENKO, PB
    SHUBIN, AE
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1983, 26 (11): : 49 - 52
  • [29] Doping in Efficient Polycrystalline CdSeTe Solar Cells via AsCl3 Vapor Annealing
    Duan, Xiaomeng
    Li, Deng-Bing
    Neupane, Sabin
    Awni, Rasha
    Wang, Yizhao
    Mansfield, Lorelle M.
    Lu, Dingyuan
    Becker, James
    Ellingson, Randy J.
    Heben, Michael J.
    Xiong, Gang
    Yan, Yanfa
    Yan, Feng
    ACS APPLIED ENERGY MATERIALS, 2025,
  • [30] IMPURITY PROFILE IN A VAPOR-GROWN GAAS LAYER
    MIKI, H
    ITO, M
    OTSUBO, M
    FUJIBAYA.K
    ELECTRONICS & COMMUNICATIONS IN JAPAN, 1972, 55 (12): : 104 - 110
12345