PROXIMITY EFFECT CORRECTION FOR AN ELECTRON-BEAM DIRECT WRITING SYSTEM EX-7

被引:12
作者
ABE, T
IKEDA, N
KUSAKABE, H
YOSHIKAWA, R
TAKIGAWA, T
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期
关键词
D O I
10.1116/1.584525
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1524 / 1527
页数:4
相关论文
共 25 条
[1]   PROXIMITY EFFECT CORRECTION FOR HIGH-VOLTAGE ELECTRON-BEAM LITHOGRAPHY [J].
ABE, T ;
TAKIGAWA, T .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (11) :4428-4434
[2]   RESIST HEATING EFFECT IN DIRECT ELECTRON-BEAM WRITING [J].
ABE, T ;
OHTA, K ;
WADA, H ;
TAKIGAWA, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03) :853-857
[3]  
ABE T, 1988, 1ST P MICR PROC C, P40
[4]  
Asano T., 1986, Layout design and verification, P295
[5]   PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY [J].
CHANG, THP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1271-1275
[6]   EXACT SOLUTION OF THE PROXIMITY EFFECT EQUATION BY A SPLITTING METHOD [J].
GERBER, PD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :432-435
[7]   EXPOSURE MODEL FOR ELECTRON-SENSITIVE RESISTS [J].
GREENEICH, JS ;
VANDUZER, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (05) :286-299
[8]   APPLYING TRANSFORM BASED PROXIMITY CORRECTIONS TO ELECTRON-BEAM LITHOGRAPHY WITH 0.2-MU-M FEATURES [J].
HASLAM, ME ;
MCDONALD, JF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :436-442
[9]   TRANSFORM BASED PROXIMITY CORRECTIONS - EXPERIMENTAL RESULTS AND COMPARISONS [J].
HASLAM, ME ;
MCDONALD, JF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :168-175
[10]  
KOMATSU K, 1981, IEICE SSD817875 TECH