DESIGN OF A CHARGE SENSITIVE PREAMPLIFIER ON HIGH-RESISTIVITY SILICON

被引：49

作者：

RADEKA, V

REHAK, P

RESCIA, S

GATTI, E

LONGONI, A

SAMPIETRO, M

HOLL, P

STRUDER, L

KEMMER, J

机构：

[1] POLITECN MILAN,I-20133 MILAN,ITALY

[2] MAX PLANCK INST,D-8000 MUNCHEN,FED REP GER

[3] TECH UNIV MUNCHEN,D-8048 GRACHING,FED REP GER

[4] MESSERSCHMITT BOLKOW BLOHM GMBH,D-8000 MUNICH,FED REP GER

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 01期

关键词：

D O I：

10.1109/23.12696

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：155 / 159

页数：5

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[4] PROGRESS IN SEMICONDUCTOR DRIFT DETECTORS [J].

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[5] SMALL GEOMETRY DEPLETED BASE BIPOLAR-TRANSISTORS (BSIT) - VLSI DEVICES [J].

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