ANISOTROPIC SPREAD OF SURFACE DIMER OPENINGS IN THE INITIAL-STAGES OF THE EPITAXIAL-GROWTH OF SI ON SI(100)

[1] APPLICATION OF THE EMBEDDED-ATOM METHOD TO COVALENT MATERIALS - A SEMIEMPIRICAL POTENTIAL FOR SILICON [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (23) : 2666 - 2669

[2] MOLECULAR-DYNAMICS WITH COUPLING TO AN EXTERNAL BATH [J]. JOURNAL OF CHEMICAL PHYSICS, 1984, 81 (08) : 3684 - 3690

[3] MOLECULAR-DYNAMICS SIMULATION OF CLUSTER AND ATOM DEPOSITION ON SILICON(111) [J]. PHYSICAL REVIEW B, 1988, 38 (12): : 8154 - 8162

[4] Brenner D. W., 1988, MATER RES SOC S P, V141, P59, DOI [10.1557/PROC-141-59, DOI 10.1557/PROC-141-59]

[5] MICROSCOPIC MECHANISMS OF REACTIONS ASSOCIATED WITH SILICON MBE - A MOLECULAR-DYNAMICS INVESTIGATION [J]. SURFACE SCIENCE, 1988, 198 (1-2) : 151 - 166

[6] DISSOCIATIVE VALENCE FORCE-FIELD POTENTIAL FOR SILICON [J]. PHYSICAL REVIEW B, 1986, 34 (02): : 1304 - 1307

[7] DING K, 1987, PHYS REV B, V34, P6987

[8] MOLECULAR-DYNAMICS SIMULATION OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF THE SILICON (100) SURFACE [J]. PHYSICAL REVIEW B, 1987, 36 (09): : 4774 - 4781

[9] INITIAL-STAGES OF SILICON MOLECULAR-BEAM EPITAXY - EFFECTS OF SURFACE RECONSTRUCTION [J]. PHYSICAL REVIEW B, 1985, 32 (01): : 6 - 11

[10] Grabow M.H, 1987, MRS ONLINE P LIBR, V94, DOI [10.1557/PROC-94-15, DOI 10.1557/PROC-94-15]

[1] APPLICATION OF THE EMBEDDED-ATOM METHOD TO COVALENT MATERIALS - A SEMIEMPIRICAL POTENTIAL FOR SILICON [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (23) : 2666 - 2669

[2] MOLECULAR-DYNAMICS WITH COUPLING TO AN EXTERNAL BATH [J]. JOURNAL OF CHEMICAL PHYSICS, 1984, 81 (08) : 3684 - 3690

[3] MOLECULAR-DYNAMICS SIMULATION OF CLUSTER AND ATOM DEPOSITION ON SILICON(111) [J]. PHYSICAL REVIEW B, 1988, 38 (12): : 8154 - 8162

[4] Brenner D. W., 1988, MATER RES SOC S P, V141, P59, DOI [10.1557/PROC-141-59, DOI 10.1557/PROC-141-59]

[5] MICROSCOPIC MECHANISMS OF REACTIONS ASSOCIATED WITH SILICON MBE - A MOLECULAR-DYNAMICS INVESTIGATION [J]. SURFACE SCIENCE, 1988, 198 (1-2) : 151 - 166

[6] DISSOCIATIVE VALENCE FORCE-FIELD POTENTIAL FOR SILICON [J]. PHYSICAL REVIEW B, 1986, 34 (02): : 1304 - 1307

[7] DING K, 1987, PHYS REV B, V34, P6987

[8] MOLECULAR-DYNAMICS SIMULATION OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF THE SILICON (100) SURFACE [J]. PHYSICAL REVIEW B, 1987, 36 (09): : 4774 - 4781

[9] INITIAL-STAGES OF SILICON MOLECULAR-BEAM EPITAXY - EFFECTS OF SURFACE RECONSTRUCTION [J]. PHYSICAL REVIEW B, 1985, 32 (01): : 6 - 11

[10] Grabow M.H, 1987, MRS ONLINE P LIBR, V94, DOI [10.1557/PROC-94-15, DOI 10.1557/PROC-94-15]